Abstract
Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10 12 devices per cm-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.
Original language | English |
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Title of host publication | 2009 International Semiconductor Conference, CAS |
Subtitle of host publication | Proceedings |
Publisher | IEEE Electron Devices Society |
Pages | 37-47 |
Number of pages | 11 |
Volume | 1 |
ISBN (Print) | 9781424444137 |
DOIs | |
Publication status | Published - 2009 |
Externally published | Yes |
Event | 2009 International Semiconductor Conference - Sinaia, Romania Duration: 12 Oct 2009 → 14 Oct 2009 https://ieeexplore.ieee.org/xpl/conhome/5319023/proceeding |
Publication series
Name | Proceedings of the International Semiconductor Conference, CAS |
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Volume | 1 |
Conference
Conference | 2009 International Semiconductor Conference |
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Abbreviated title | CAS 2009 |
Country/Territory | Romania |
City | Sinaia |
Period | 12/10/09 → 14/10/09 |
Internet address |
Keywords*
- Nanoelectromechanical systems
- Resonator
- Semiconductor
- Switch
Field of Science*
- 1.3 Physical sciences
- 2.5 Materials engineering
Publication Type*
- 3.1. Articles or chapters in proceedings/scientific books indexed in Web of Science and/or Scopus database