Devices based on semiconductor nanowires

D. Erts; R. Meija; P. Birjukovs; J. Andzane; M. Studers; R. Löhmus; J. D. Holme

doi:10.1109/SMICND.2009.5336616

Devices based on semiconductor nanowires

D. Erts, R. Meija, P. Birjukovs, J. Andzane, M. Studers, R. Löhmus, J. D. Holme

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10 ¹² devices per cm^-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.

Original language	English
Title of host publication	2009 International Semiconductor Conference, CAS
Subtitle of host publication	Proceedings
Publisher	IEEE Electron Devices Society
Pages	37-47
Number of pages	11
Volume	1
ISBN (Print)	9781424444137
DOIs	https://doi.org/10.1109/SMICND.2009.5336616
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Semiconductor Conference - Sinaia, Romania Duration: 12 Oct 2009 → 14 Oct 2009 https://ieeexplore.ieee.org/xpl/conhome/5319023/proceeding

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	1

Conference

Conference	2009 International Semiconductor Conference
Abbreviated title	CAS 2009
Country/Territory	Romania
City	Sinaia
Period	12/10/09 → 14/10/09
Internet address	https://ieeexplore.ieee.org/xpl/conhome/5319023/proceeding

Keywords*

Nanoelectromechanical systems
Resonator
Semiconductor
Switch

Field of Science*

1.3 Physical sciences
2.5 Materials engineering

Publication Type*

3.1. Articles or chapters in proceedings/scientific books indexed in Web of Science and/or Scopus database

Access to Document

10.1109/SMICND.2009.5336616

Cite this

Erts, D., Meija, R., Birjukovs, P., Andzane, J., Studers, M., Löhmus, R., & Holme, J. D. (2009). Devices based on semiconductor nanowires. In 2009 International Semiconductor Conference, CAS: Proceedings (Vol. 1, pp. 37-47). [5336616] (Proceedings of the International Semiconductor Conference, CAS; Vol. 1). IEEE Electron Devices Society. https://doi.org/10.1109/SMICND.2009.5336616

@inproceedings{e87009f217614fd793a9b1d17fcab014,

title = "Devices based on semiconductor nanowires",

abstract = "Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10 12 devices per cm-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.",

keywords = "Nanoelectromechanical systems, Resonator, Semiconductor, Switch",

author = "D. Erts and R. Meija and P. Birjukovs and J. Andzane and M. Studers and R. L{\"o}hmus and Holme, {J. D.}",

year = "2009",

doi = "10.1109/SMICND.2009.5336616",

language = "English",

isbn = "9781424444137",

volume = "1",

series = "Proceedings of the International Semiconductor Conference, CAS",

publisher = "IEEE Electron Devices Society",

pages = "37--47",

booktitle = "2009 International Semiconductor Conference, CAS",

address = "United States",

note = "2009 International Semiconductor Conference, CAS 2009 ; Conference date: 12-10-2009 Through 14-10-2009",

url = "https://ieeexplore.ieee.org/xpl/conhome/5319023/proceeding",

}

Erts, D, Meija, R, Birjukovs, P, Andzane, J, Studers, M, Löhmus, R & Holme, JD 2009, Devices based on semiconductor nanowires. in 2009 International Semiconductor Conference, CAS: Proceedings. vol. 1, 5336616, Proceedings of the International Semiconductor Conference, CAS, vol. 1, IEEE Electron Devices Society, pp. 37-47, 2009 International Semiconductor Conference, Sinaia, Romania, 12/10/09. https://doi.org/10.1109/SMICND.2009.5336616

Devices based on semiconductor nanowires. / Erts, D.; Meija, R.; Birjukovs, P. et al.
2009 International Semiconductor Conference, CAS: Proceedings. Vol. 1 IEEE Electron Devices Society, 2009. p. 37-47 5336616 (Proceedings of the International Semiconductor Conference, CAS; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Devices based on semiconductor nanowires

AU - Erts, D.

AU - Meija, R.

AU - Birjukovs, P.

AU - Andzane, J.

AU - Studers, M.

AU - Löhmus, R.

AU - Holme, J. D.

PY - 2009

Y1 - 2009

N2 - Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10 12 devices per cm-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.

AB - Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10 12 devices per cm-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.

KW - Nanoelectromechanical systems

KW - Resonator

KW - Semiconductor

KW - Switch

UR - http://www.scopus.com/inward/record.url?scp=77950102946&partnerID=8YFLogxK

U2 - 10.1109/SMICND.2009.5336616

DO - 10.1109/SMICND.2009.5336616

M3 - Conference contribution

AN - SCOPUS:77950102946

SN - 9781424444137

VL - 1

T3 - Proceedings of the International Semiconductor Conference, CAS

SP - 37

EP - 47

BT - 2009 International Semiconductor Conference, CAS

PB - IEEE Electron Devices Society

T2 - 2009 International Semiconductor Conference

Y2 - 12 October 2009 through 14 October 2009

ER -

Devices based on semiconductor nanowires

Abstract

Publication series

Conference

Keywords*

Field of Science*

Publication Type*

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