We present and describe a new embedded-cluster approach for calculating both the electronic and the spatial structure of point defects in ionic crystals with self-consistent incorporation of the polarisation effects into the eigenvalue spectrum and the total energy of a crystal. For the first time both the electronic structure and the ionic displacements within a large cluster containing a defect are obtained in the framework of the same calculating scheme. It permits us to describe correctly back-coupling between redistribution of the electron density in a defective region and polarisation of the rest of the crystal outside the cluster, which can play a vital role for the study of small polaron effects. Making use of a 45- atom cluster with 175 electrons and the semi-empirical indo method, we have simulated the impurity-induced trapping of a hole in the [Li]o centre in an MgO crystal. Our calculations do not use a priori assumptions and do confirm that one-centre localisation of a hole in the ground state is energetically favourable. We show that polarisation energies can differ considerably for the ground and charge-transfer excited states of the defect. It is also demonstrated that the generally accepted model of the O- hole polaron is oversimplified: A considerable charge redistribution between Li+ and another O- along the (100) direction takes place.
|Number of pages||17|
|Journal||Journal of Physics C: Solid State Physics|
|Publication status||Published - 10 Aug 1986|
Field of Science*
- 2.4 Chemical engineering
- 1.3 Physical sciences
- 1.1. Scientific article indexed in Web of Science and/or Scopus database