Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires

Raimonds Meija, Gunta Kunakova, Juris Prikulis, Justin M. Varghese, Justin D. Holmes, Donats Erts

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
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Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Original languageEnglish
Article number6823601
JournalJournal of Nanomaterials
Publication statusPublished - 2017
Externally publishedYes

Field of Science*

  • 1.3 Physical sciences
  • 1.4 Chemical sciences

Publication Type*

  • 1.1. Scientific article indexed in Web of Science and/or Scopus database


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