Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires

Raimonds Meija; Gunta Kunakova; Juris Prikulis; Justin M. Varghese; Justin D. Holmes; Donats Erts

doi:10.1155/2017/6823601

Relative Humidity Dependent Resistance Switching of Bi₂S₃ Nanowires

Raimonds Meija, Gunta Kunakova, Juris Prikulis, Justin M. Varghese, Justin D. Holmes, Donats Erts

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

8 Downloads (Pure)

Abstract

Electrical properties of Bi₂S₃ nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Original language	English
Article number	6823601
Journal	Journal of Nanomaterials
Volume	2017
DOIs	https://doi.org/10.1155/2017/6823601
Publication status	Published - 2017
Externally published	Yes

Field of Science*

1.3 Physical sciences
1.4 Chemical sciences

Publication Type*

1.1. Scientific article indexed in Web of Science and/or Scopus database

Access to Document

10.1155/2017/6823601Licence: CC BY

Relative Humidity Dependent ResistanceFinal published version, 2.56 MBLicence: CC BY

Cite this

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title = "Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires",

abstract = "Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.",

author = "Raimonds Meija and Gunta Kunakova and Juris Prikulis and Varghese, {Justin M.} and Holmes, {Justin D.} and Donats Erts",

note = "Funding Information: This work was done within Latvian National Research Program IMIS 2 and University of Latvia Base/Performance Funding Projects nos. AAP2016/B043 and ZD2010/AZ19. Publisher Copyright: {\textcopyright} 2017 Raimonds Meija et al.",

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doi = "10.1155/2017/6823601",

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volume = "2017",

journal = "Journal of Nanomaterials",

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T1 - Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires

AU - Meija, Raimonds

AU - Kunakova, Gunta

AU - Prikulis, Juris

AU - Varghese, Justin M.

AU - Holmes, Justin D.

AU - Erts, Donats

N1 - Funding Information: This work was done within Latvian National Research Program IMIS 2 and University of Latvia Base/Performance Funding Projects nos. AAP2016/B043 and ZD2010/AZ19. Publisher Copyright: © 2017 Raimonds Meija et al.

PY - 2017

Y1 - 2017

N2 - Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

AB - Electrical properties of Bi2S3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

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VL - 2017

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

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