Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

R. Meija; A. I. Livshits; J. Kosmaca; L. Jasulaneca; J. Andzane; S. Biswas; J. D. Holmes; D. Erts

doi:10.1088/1361-6528/ab2b11

Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

R. Meija, A. I. Livshits, J. Kosmaca, L. Jasulaneca, J. Andzane, S. Biswas, J. D. Holmes, D. Erts

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge_0.91Sn_0.09 alloy and Bi₂Se₃ nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Original language	English
Article number	385203
Journal	Nanotechnology
Volume	30
Issue number	38
DOIs	https://doi.org/10.1088/1361-6528/ab2b11
Publication status	Published - 8 Jul 2019
Externally published	Yes

Keywords*

Bi2Se3
GeSn
nanowire
NEMS
resonance
switch

Field of Science*

1.3 Physical sciences
1.4 Chemical sciences

Publication Type*

1.1. Scientific article indexed in Web of Science and/or Scopus database

Access to Document

10.1088/1361-6528/ab2b11

Cite this

@article{8afada9e35a14c31bf3ce8494013a989,

title = "Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches",

abstract = "Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.",

keywords = "Bi2Se3, GeSn, nanowire, NEMS, resonance, switch",

author = "R. Meija and Livshits, {A. I.} and J. Kosmaca and L. Jasulaneca and J. Andzane and S. Biswas and Holmes, {J. D.} and D. Erts",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

month = jul,

day = "8",

doi = "10.1088/1361-6528/ab2b11",

language = "English",

volume = "30",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "38",

}

TY - JOUR

T1 - Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

AU - Meija, R.

AU - Livshits, A. I.

AU - Kosmaca, J.

AU - Jasulaneca, L.

AU - Andzane, J.

AU - Biswas, S.

AU - Holmes, J. D.

AU - Erts, D.

PY - 2019/7/8

Y1 - 2019/7/8

N2 - Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

AB - Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

KW - Bi2Se3

KW - GeSn

KW - nanowire

KW - NEMS

KW - resonance

KW - switch

UR - http://www.scopus.com/inward/record.url?scp=85069193021&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/ab2b11

DO - 10.1088/1361-6528/ab2b11

M3 - Article

C2 - 31216518

AN - SCOPUS:85069193021

SN - 0957-4484

VL - 30

JO - Nanotechnology

JF - Nanotechnology

IS - 38

M1 - 385203

ER -

Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

Abstract

Keywords*

Field of Science*

Publication Type*

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