Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches

R. Meija, A. I. Livshits, J. Kosmaca, L. Jasulaneca, J. Andzane, S. Biswas, J. D. Holmes, D. Erts

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Original languageEnglish
Article number385203
JournalNanotechnology
Volume30
Issue number38
DOIs
Publication statusPublished - 8 Jul 2019
Externally publishedYes

Keywords

  • Bi2Se3
  • GeSn
  • nanowire
  • NEMS
  • resonance
  • switch

Field of Science

  • 1.3 Physical sciences
  • 1.4 Chemical sciences

Publication Type

  • 1.1. Scientific article indexed in Web of Science and/or Scopus database

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