Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

Jelena Kosmaca; Jana Andzane; Margarita Baitimirova; Floriana Lombardi; Donats Erts

doi:10.1021/acsami.6b00406

Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi₂Se₃ Interlayers between Conductive Electrodes

Jelena Kosmaca, Jana Andzane, Margarita Baitimirova, Floriana Lombardi, Donats Erts (Corresponding Author)

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi₂Se₃ layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi₂Se₃ nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi₂Se₃ nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

Original language	English
Pages (from-to)	12257-12262
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	19
DOIs	https://doi.org/10.1021/acsami.6b00406
Publication status	Published - 18 May 2016
Externally published	Yes

Keywords*

bismuth selenide
nanobelts
nanoelectromechanical switching
nanostructured interlayers
sandwich device

Field of Science*

1.3 Physical sciences
2.5 Materials engineering

Publication Type*

1.1. Scientific article indexed in Web of Science and/or Scopus database

Access to Document

10.1021/acsami.6b00406

Cite this

@article{7bacf2ef193f42329f1289dc7d5b3400,

title = "Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes",

abstract = "We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.",

keywords = "bismuth selenide, nanobelts, nanoelectromechanical switching, nanostructured interlayers, sandwich device",

author = "Jelena Kosmaca and Jana Andzane and Margarita Baitimirova and Floriana Lombardi and Donats Erts",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = may,

day = "18",

doi = "10.1021/acsami.6b00406",

language = "English",

volume = "8",

pages = "12257--12262",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "19",

}

TY - JOUR

T1 - Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

AU - Kosmaca, Jelena

AU - Andzane, Jana

AU - Baitimirova, Margarita

AU - Lombardi, Floriana

AU - Erts, Donats

PY - 2016/5/18

Y1 - 2016/5/18

N2 - We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

AB - We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

KW - bismuth selenide

KW - nanobelts

KW - nanoelectromechanical switching

KW - nanostructured interlayers

KW - sandwich device

UR - http://www.scopus.com/inward/record.url?scp=84971223310&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b00406

DO - 10.1021/acsami.6b00406

M3 - Article

AN - SCOPUS:84971223310

SN - 1944-8244

VL - 8

SP - 12257

EP - 12262

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 19

ER -