Sensing properties of assembled Bi2S3 nanowire arrays

G. Kunakova, R. Meija, I. Bite, J. Prikulis, J. Kosmaca, J. Varghese, J. D. Holmes, Donats Erts

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current-voltage characteristics were measured at different relative humidity (RH) levels (5-80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

Original languageEnglish
Article number094017
JournalPhysica Scripta
Issue number9
Publication statusPublished - 1 Sept 2015
Externally publishedYes


  • bismuth sulfide
  • nanowire array
  • relative humidity

Field of Science*

  • 1.3 Physical sciences

Publication Type*

  • 1.1. Scientific article indexed in Web of Science and/or Scopus database


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